vishay siliconix si7806bdn new product document number: 73081 s-60790-rev. b, 08-may-06 www.vishay.com 1 n-channel 30-v (d-s) fast switching mosfet features ? trenchfet ? power mosfets ? pwm optimized ? new low thermal resistance powerpak ? package with low 1.07 mm profile applications ? dc/dc converters - secondary synchronous rectifier - high-side mosfet in synchronous buck product summary v ds (v) r ds(on) ( )i d (a) 30 0.0145 at v gs = 10 v 12.6 0.0205 at v gs = 4.5 v 10.6 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak 1212- 8 bottom v ie w ordering information: si7 8 06bd n -t1-e3 (lead (p b )-free) n -channel mosfet g d s notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c unless otherwise noted parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d 12.6 8.0 a t a = 70 c 10.1 6.4 pulsed drain current i dm 40 continuous source current (diode conduction) a i s 3.2 1.3 maximum power dissipation a t a = 25 c p d 3.8 1.5 w t a = 70 c 2.0 0.8 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 sec r thja 24 33 c/w steady state 65 81 maximum junction-to-case (drain) steady state r thjc 1.9 2.4 rohs compliant
www.vishay.com 2 document number: 73081 s-60790-rev. b, 08-may-06 vishay siliconix si7806bdn notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c unless noted specifications t j = 25 c unless otherwise noted parameter symbol test conditions min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 12.6 a 0.012 0.0145 v gs = 4.5 v, i d = 10.6 a 0.017 0.0205 forward transconductance a g fs v ds = 15 v, i d = 12.6 a 34 s diode forward voltage a v sd i s = 3.2 a, v gs = 0 v 0.77 1.2 v dynamic b total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 12.6 a 8.5 11 nc q gt v ds = 15 v, v gs = 10 v, i d = 12.6 a 19 24 gate-source charge q gs 3.6 gate-drain charge q gd 3.0 gate resistance r g f = 10 mhz 2 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 815 ns rise time t r 12 20 turn-off delay time t d(off) 25 40 fall time t f 10 20 source-drain reverse recovery time t rr i f = 3.2 a, di/dt = 100 a/s 35 70 output characteristics 0 5 10 15 20 25 30 35 40 012345 v gs = 10 thr u 5 v 3 v v ds ? drain-to-so u rce v oltage ( v ) ?) a ( t n e r r u c n i a r d i d 4 v transfer characteristics 0 5 10 15 20 25 30 35 40 012345 25 c t c = 125 c - 55 c v gs ? gate-to-so u rce v oltage ( v ) ?) a ( t n e r r u c n i a r d i d
document number: 73081 s-60790-rev. b, 08-may-06 www.vishay.com 3 vishay siliconix si7806bdn typical characteristics 25 c unless noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 5 10 15 20 25 30 35 40 ?( ) e c n a t s i s e r - n o r ) n o ( s d i d ? drain c u rrent (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 04 8 12 16 20 v ds = 15 v i d = 12.6 a ?) v ( e g a t l o v e c r u o s - o t - e t a g q g ? total gate charge (nc) v s g v sd ? so u rce-to-drain v oltage ( v ) 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c 50 10 1 ?) a ( t n e r r u c e c r u o s i s t j = 150 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 200 400 600 8 00 1000 1200 1400 0 5 10 15 20 25 30 c rss c oss c iss v ds ? drain-to-so u rce v oltage ( v ) c? ) f p ( e c n a t i c a p a c 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 12.6 a t j ? j u nction temperat u re (c) r ) n o ( s d ?e c n a t s i s e r - n o ) d e z i l a m r o n ( 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0246 8 10 ?( ) e c n a t s i s e r - n o r ) n o ( s d v gs ? gate-to-so u rce v oltage ( v ) i d = 2 a i d = 12.6 a
www.vishay.com 4 document number: 73081 s-60790-rev. b, 08-may-06 vishay siliconix si7806bdn typical characteristics 25 c unless noted threshold voltage - 1.0 - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( e c n a i r a v v ) h t ( s g t j ? temperat u re (c) single pulse power, junction-to-ambient 0.01 0 1 40 50 10 600 time (sec) 30 20 ) w ( r e w o p 0.1 10 100 safe operating area v ds ? drain-to-so u rce v oltage ( v ) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single p u lse ?) a ( t n e r r u c n i a r d i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited b v dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (sec) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
vishay siliconix si7806bdn document number: 73081 s-60790-rev. b, 08-may-06 www.vishay.com 5 typical characteristics 25 c unless noted vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73081 . normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (sec) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t
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